A1245 查看數據表（PDF） - Toshiba
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A1245 Datasheet PDF : 5 Pages
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TOSHIBA Transistor Silicon PNP Epitaxial Planar Type
2SA1245
High Frequency Amplifier and Switching Applications
VHF~UHF Band Low Noise Amplifier Applications
2SA1245
Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Rating
Unit
-15
V
-8
V
-2
V
-30
mA
-15
mA
150
mW
125
°C
-55~125
°C
Microwave Characteristics (Ta = 25°C)
JEDEC
―
JEITA
SC-59
TOSHIBA
2-3F1A
Weight: 0.012 g (typ.)
Characteristics
Transition frequency
Insertion gain
Noise figure
Symbol
Test Condition
Min Typ. Max Unit
fT
VCE = -5 V, IC = -10 mA
¾
4
¾ GHz
ïS21eï2 (1) VCE = -5 V, IC = -10 mA, f = 500 MHz
¾
14
¾
dB
ïS21eï2 (2) VCE = -5 V, IC = -10 mA, f = 1 GHz
¾
9.5
¾
NF (1) VCE = -5 V, IC = -3 mA, f = 500 MHz
¾
2.5
¾
dB
NF (2) VCE = -5 V, IC = -3 mA, f = 1 GHz
¾
3.0
¾
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Collector cut-off current
Emitter cut-off current
DC current gain
Output capacitance
Reverse transfer capacitance
ICBO
IEBO
hFE
Cob
Cre
VCB = -5 V, IE = 0
¾
¾ -0.1 mA
VEB = -1 V, IC = 0
¾
¾ -0.1 mA
VCE = -5 V, IC = -10 mA
20
¾
¾
¾ 0.75 ¾
pF
VCB = -5 V, IE = 0, f = 1 MHz (Note)
¾ 0.60 ¾
pF
Note: Cre is measured by 3 terminal method with capacitance bridge.
1
2003-03-19
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