2SA1314 查看數據表（PDF） - Toshiba

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2SA1314

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)

Toshiba 

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Collector cut-off current

Emitter cut-off current

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

DC current gain

Collector-emitter saturation voltage

Base-emitter voltage

Transition frequency

Collector output capacitance

ICBO

VCB = −20 V, IE = 0

IEBO

VEB = −6 V, IC = 0

V (BR) CEO IC = −10 mA, IB = 0

V (BR) EBO IE = −1 mA, IC = 0

hFE (1)

VCE = −1 V, IC = −0.5 A

(Note 4)

hFE (2)

VCE (sat)

VBE

VCE = −1 V, IC = −4 A

IC = −2 A, IB = −50 mA

VCE = −1 V, IC = −2 A

fT

VCE = −1 V, IC = −0.5 A

Cob

VCB = −10 V, IE = 0, f = 1 MHz

Note 4: hFE (1) classification A: 140 to 280, B: 200 to 400, C: 300 to 600

Marking

T

Lot No.

Part No. (or abbreviation code)

Characteristics indicator

A line indicates

lead (Pb)-free package or

lead (Pb)-free finish.

2SA1314

Min Typ. Max Unit

―

― −100 nA

―

― −100 nA

−10 ―

―

V

−6

―

―

V

140

―

600

60 120 ―

― −0.2 −0.5

V

― −0.83 −1.5

V

― 140 ― MHz

―

50

―

pF

2

2006-11-09

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