2SB1155 查看數據表（PDF） - SavantIC Semiconductor

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2SB1155

Silicon PNP Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon PNP Power Transistors

Product Specification

2SB1155

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ;IB=0

VCEsat-1 Collector-emitter saturation voltage IC=-7A ;IB=-0.35A

-80

V

-0.5

V

VCEsat-2 Collector-emitter saturation voltage IC=-15A ;IB=-1.5A

-1.5

V

VBEsat-1 Base-emitter saturation voltage

VBEsat-2 Base-emitter saturation voltage

ICBO

Collector cut-off current

IEBO

Emitter cut-off current

IC=-7A ;IB=-0.35A

IC=-15A ;IB=-1.5A

VCB=-100V; IE=0

VEB=-5V; IC=0

-1.5

V

-2.5

V

-10

µA

-50

µA

hFE-1

DC current gain

IC=-0.1A ; VCE=-2V

45

hFE -2

DC current gain

hFE -3

DC current gain

fT

Transition frequency

Switching times

IC=-3A ; VCE=-2V

90

IC=-8A ; VCE=-2V

30

IC=-0.5A ; VCE=-10V;f=10MHz

260

25

MHz

ton

Turn-on time

tstg

Storage time

tf

Fall time

IC=-7A ;IB1=-IB2=-0.7A

VCC=-50V

0.5

µs

1.3

µs

0.2

µs

hFE-2 classifications

Q

P

90-180

130-260

2

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