2SB1162 查看數據表（PDF） - Inchange Semiconductor
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2SB1162 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2SB1162
DESCRIPTION
·With TO-3PL package
·Complement to type 2SD1717
·Excellent linearity of hFE
·Wide area of safe operation (ASO)
·High transition frequency fT
APPLICATIONS
·For high power amplifier applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-3PL) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC
Collector current
ICM
Collector current-peak
PC
Collector power dissipation
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25℃
VALUE
-160
-160
-5
-12
-20
3.5
120
150
-55~150
UNIT
V
V
V
A
A
W
℃
℃
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