2SB1162 查看數據表（PDF） - Inchange Semiconductor
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2SB1162 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEsat Collector-emitter saturation voltage IC=-8A ;IB=-0.8A
VBE
Base-emitter voltage
IC=-8A ; VCE=-5V
ICBO
Collector cut-off current
VCB=-160V; IE=0
IEBO
Emitter cut-off current
VEB=-3V; IC=0
hFE-1
DC current gain
IC=-20mA ; VCE=-5V
hFE-2
DC current gain
IC=-1A ; VCE=-5V
hFE-3
DC current gain
IC=-8A ; VCE=-5V
fT
Transition frequency
IC=-0.5A ; VCE=-5V
COB
Collector output capacitance
f=1MHz;VCB=-10V
hFE-2 classifications
Q
S
P
60-120 80-160 100-200
Product Specification
2SB1162
MIN TYP. MAX UNIT
-2.0
V
-1.8
V
-50
μA
-50
μA
20
60
200
20
20
MHz
210
pF
2
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