B727K 查看數據表（PDF） - Hitachi -> Renesas Electronics

零件编号

产品描述 (功能)

生产厂家

B727K

Silicon PNP Epitaxial

Hitachi -> Renesas Electronics 

2SB727(K)

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min Typ

Collector to emitter breakdown V(BR)CEO –120 —

voltage

Emitter to base breakdown

V(BR)EBO

–7

—

voltage

Collector cutoff current

DC current transfer ratio

Collector to emitter saturation

voltage

Base to emitter saturation

voltage

Turn on time

Turn off time

Note: 1. Pulse test

I CBO

I CEO

hFE

VCE(sat)1

VCE(sat)2

VBE(sat)1

VBE(sat)2

t on

t off

—

—

—

—

1000 —

—

—

—

—

—

—

—

—

—

1.0

—

3.0

Max Unit

—

V

—

V

–100 µA

–10 µA

20000

–1.5 V

–3.0 V

–2.0 V

–3.5 V

—

µs

—

µs

Test conditions

IC = –25 mA, RBE = ∞

IE = –50 mA, IC = 0

VCB = –120 V, IE = 0

VCE = –100 V, RBE = ∞

VCE = –3 V, IC = –3 A*1

IC = –3 A, IB = –6 mA*1

IC = –6 A, IB = –60 mA*1

IC = –3 A, IB = –6 mA*1

IC = –6 A, IB = –60 mA*1

IC = –3 A, IB1 = –IB2 = –6 mA

Maximum Collector Dissipation Curve

60

40

20

0

50

100

150

Case Temperature TC (°C)

Area of Safe Operation

–30 IC (max) (Continuous)

iC (peak)

–10

1 µs

–3

–1.0

–0.3

Ta = 25°C

–0.1 1 Shot pulse

–0.03

–1 –3 –10 –30 –100 –300 –1,000

Collector to emitter Voltage VCE (V)

2

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