2SB767 查看數據表（PDF） - Panasonic Corporation
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2SB767 Datasheet PDF : 3 Pages
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Transistors
2SB0767 (2SB767)
Silicon PNP epitaxial planar type
For low-frequency output amplification
Complementary to 2SD0875 (2SD875)
4.5±0.1
1.6±0.2
Unit: mm
1.5±0.1
■ Features
• Large collector power dissipation PC
• High collector-emitter voltage (Base open) VCEO
• Mini type package, allowing downsizing of the equipment and automatic
insertion through the tape packing and the magazine packing
1
0.4±0.08
1.5±0.1
23
0.5±0.08
3˚
0.4±0.04
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) VCBO
−80
V
Collector-emitter voltage (Base open) VCEO
−80
V
Emitter-base voltage (Collector open) VEBO
−5
V
Peak collector current
ICP
−1
A
Collector current
IC
− 0.5
A
Collector power dissipation *
PC
1
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg −55 to +150 °C
Note) *: Print circuit board: Copper foil area of 1 cm2 or more, and the board
thickness of 1.7 mm for the collector portion.
45˚
3.0±0.15
Marking Symbol: C
1: Base
2: Collector
3: Emitter
MiniP3-F1 Package
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max
Collector-base cutoff current (Emitter open) ICBO VCB = −20 V, IE = 0
− 0.1
Collector-base voltage (Emitter open) VCBO IC = −10 µA, IE = 0
−80
Collector-emitter voltage (Base open) VCEO IC = −100 µA, IB = 0
−80
Emitter-base voltage (Collector open) VEBO IE = −10 µA, IC = 0
−5
Forward current transfer ratio *1
hFE1 *2 VCE = −10 V, IC = −150 mA
90
220
hFE2 VCE = −5 V, IC = −500 mA
50 100
Collector-emitter saturation voltage *1 VCE(sat) IC = −300 mA, IB = −30 mA
− 0.2 − 0.4
Base-emitter saturation voltage *1
VBE(sat) IC = −300 mA, IB = −30 mA
− 0.85 −1.20
Transition frequency
fT
VCB = −10 V, IE = 50 mA, f = 200 MHz
120
Collector output capacitance
(Common base, input open circuited)
Cob VCB = −10 V, IE = 0, f = 1 MHz
20 30
Unit
µA
V
V
V
V
V
MHz
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Rank
Q
R
hFE1
90 to 155 130 to 220
Publication date: August 2003
Note) The part numbers in the parenthesis show conventional part number.
SJC00052CED
1
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