2SC1116 查看數據表（PDF） - Inchange Semiconductor
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2SC1116 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC1116
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-emitter breakdown voltage IC=25mA ;IB=0
120
V
V(BR)CBO Collector-base breakdown voltage
IC=1mA ;IE=0
180
V
V(BR)EBO Emitter-base breakdown voltage
IE=1mA ;IC=0
6
V
VCEsat Collector-emitter saturation voltage IC=5A; IB=0.5A
2.0
V
ICBO
Collector cut-off current
VCB=180V; IE=0
0.1 mA
IEBO
Emitter cut-off current
VEB=5V; IC=0
0.1 mA
hFE
DC current gain
IC=3A ; VCE=4V
50
固I电NC半H导A体NGE SEMICONDUCTOR fT
Transition frequency
IC=1A ; VCE=12V
10
MHz
2
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