2SC1173 查看數據表（PDF） - Inchange Semiconductor
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2SC1173 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC1173
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0
30
V
V(BR)CBO Collector-base breakdown voltage
IC=0.5mA ;IE=0
30
V
V(BR)EBO Emitter-base breakdown voltage
IE=1mA ;IC=0
5
V
VCEsat Collector-emitter saturation voltage IC=2A IB=0.2A
0.8
V
VBE
Base-emitter on voltage
ICBO
Collector cut-off current
IEBO
Emitter cut-off current
IC=0.5A ; VCE=2V
VCB=20V;IE=0
VEB=5V; IC=0
1.0
V
1.0
μA
1.0
μA
hFE-1
DC current gain
IC=0.5A ; VCE=2V
70
240
体 hFE-2
固I电NC半H导ANGE SEMICONDUCTOR COB
fT
DC current gain
Output capacitance
Transition frequency
hFE-1 classifications
O
Y
IC=2.5A ; VCE=2V
IE=0; VCB=10V;f=1MHz
IC=0.5A ; VCE=2V
25
35
100
pF
MHz
70-140
120-240
2
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