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2SC3074-Y 查看數據表(PDF) - Toshiba
零件编号
产品描述 (功能)
生产厂家
2SC3074-Y
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
Toshiba
2SC3074-Y Datasheet PDF : 5 Pages
1
2
3
4
5
I
C
– V
CE
10
Common emitter
Tc = 25°C
100 90
8
80
70
60
6
50
40
4
30
20
2
IB = 10 mA
0
0
2
4
6
8
10
12
Collector-emitter voltage V
CE
(V)
V
CE
– I
C
1.0
0.8
20
IB = 10 mA
0.6
Common emitter
Tc = 100°C
40 60 80 100
120
150
0.4
200
500
0.2
0
0
1
2
3
4
5
6
7
Collector current I
C
(A)
2SC3074
1.2
1.0
IB = 10 mA
0.8
20
0.6
0.4
0.2
V
CE
– I
C
Common emitter
Tc = 25°C
40 60 80
100
150
200
300
500
0
0
1
2
3
4
5
6
7
Collector current I
C
(A)
1.2
1.0
0.8
IB = 20 mA
40
0.6
0.4
0.2
V
CE
– I
C
Common emitter
Tc =
−
55°C
120 160 200
250
300
500
0
0
1
2
3
4
5
6
7
Collector current I
C
(A)
1000
500
300
100
50
30
h
FE
– I
C
Common emitter
VCE = 1 V
Tc = 100°C
25
−
55
10
0.03
0.1
0.3
1
3
10
Collector current I
C
(A)
1
Common emitter
0.5
IC/IB = 20
0.3
V
CE (sat)
– I
C
Tc =
−
55°C
25
0.1
0.05
100
0.03
0.01
0.03
0.1
0.3
1
3
10
Collector current I
C
(A)
3
2010-08-27
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