2SC3163 查看數據表（PDF） - Inchange Semiconductor
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2SC3163 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ; IB=0
VCEsat Collector-emitter saturation voltage IC=3A; IB=0.3A
VBEsat Base-emitter saturation voltage
IC=3A; IB=0.3A
ICEO
Collector cut-off current
VCE=400V ;IB=0
ICBO
Collector cut-off current
VCB=500V ;IE=0
IEBO
Emitter cut-off current
VEB=7V; IC=0
hFE-1
DC current gain
IC=3A ; VCE=2V
hFE-2
DC current gain
IC=6A ; VCE=2V
fT
Transition frequency
IC=0.6A ; VCE=10V
Product Specification
2SC3163
MIN TYP. MAX UNIT
400
V
1.0
V
1.5
V
100
μA
100
μA
100
μA
15
8
20
MHz
2
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