2SC3063 查看數據表（PDF） - Inchange Semiconductor

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2SC3063

Silicon NPN Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon NPN Power Transistors

Product Specification

2SC3063

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

VCEsat Collector-emitter saturation voltage IC=30mA ;IB=3m A

1.5

V

VBE

Base-emitter on voltage

IC=30mA ; VCE=10V

V(BR)CBO Collector-base breakdown voltage

IC=10μA;IE=0

V(BR)CEO Collector-emitter breakdown voltage IC=100μA; IB=0

V(BR)EBO Emitter-base breakdown voltage

IE=10μA; IC=0

1.2

V

300

V

300

V

7

V

hFE

DC current gain

IC=5mA ; VCE=50V

50

250

COB

Output capacitance

IE=0; VCB=30V;f=1MHz

2.4

pF

固IN电C半H导AN体GE SEMICONDUCTOR fT

Transition frequency

IE=-20mA ; VCB=30V

70

MHz

2

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