2SC3762 查看數據表（PDF） - Inchange Semiconductor

零件编号

产品描述 (功能)

生产厂家

2SC3762

Silicon NPN Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon NPN Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=25mA ;IB=0

V(BR)CBO Collector-base breakdown voltage

IC=1mA ;IE=0

V(BR)EBO Emitter-base breakdown voltage

IE=1mA ;IC=0

VCEsat Collector-emitter saturation voltage IC=10A ;IB=1A

VBEsat Base-emitter saturation voltage

IC=10A ;IB=1A

ICBO

Collector cut-off current

VCB=100V ;IE=0

IEBO

Emitter cut-off current

VEB=4V; IC=0

hFE

DC current gain

IC=5A ; VCE=5V

Product Specification

2SC3762

MIN TYP. MAX UNIT

100

V

150

V

6

V

0.6

V

1.5

V

10

μA

10

μA

30

120

2

Share Link: