2SC3627 查看數據表（PDF） - SavantIC Semiconductor

零件编号

产品描述 (功能)

生产厂家

2SC3627

Silicon NPN Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon NPN Power Transistors

Product Specification

2SC3627

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=10mA; IB=0

V(BR)CBO Collector-base breakdown voltage

IC=1mA; IE=0

VCEsat Collector-emitter saturation voltage IC=5 A;IB=0.5 A

VBEsat Base-emitter saturation voltage

IC=5 A;IB=0.5 A

ICBO

Collector cut-off current

VCB=200V ;IE=0

IEBO

Emitter cut-off current

VEB=7V ;IC=0

hFE-1

DC current gain

IC=10mA ; VCE=5V

hFE-2

DC current gain

IC=5A ; VCE=5V

Switching times

tr

Rise time

ts

Storage time

tf

Fall time

VCC:150V,RL=25=

IB1=-IB2=0.6 A

MIN TYP. MAX UNIT

200

V

250

V

1.0

V

1.5

V

100 µA

1

mA

15

20

80

1.0

µs

2.5

µs

1.0

µs

2

Share Link: