2SC3855 查看數據表（PDF） - Inchange Semiconductor
零件编号
产品描述 (功能)
生产厂家
2SC3855 Datasheet PDF : 4 Pages
| |||
Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC3855
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;IB=0
140
V
VCEsat Collector-emitter saturation voltage IC=5A; IB=0.5A
ICBO
Collector cut-off current
VCB=200V; IE=0
IEBO
Emitter cut-off current
VEB=6V; IC=0
2.0
V
100 μA
100 μA
hFE
DC current gain
IC=3A ; VCE=4V
50
fT
Transition frequency
IC=0.5A ; VCE=12V
20
MHz
Switching times
ton
Turn-on time
固IN电C半H导AN体GE SEMICONDUCTOR ts
Storage time
tf
Fall time
IC=5A;RL=12Ω
IB1=- IB2=0.5A
VCC=60V
0.30
μs
2.40
μs
0.40
μs
2
Share Link: 