2SC3857 查看數據表（PDF） - Quanzhou Jinmei Electronic
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2SC3857 Datasheet PDF : 4 Pages
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JMnic
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=50mA; IB=0
VCEsat Collector-emitter saturation voltage IC=10 A;IB=1 A
ICBO
Collector cut-off current
VCB=200V; IE=0
IEBO
Emitter cut-off current
hFE
DC current gain
fT
Transition frequency
VEB=6V; IC=0
IC=5A ; VCE=4V
IE=-0.5A ; VCE=12V
COB
Output capacitance
IE=0; VCB=10V;f=1MHz
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=5A;RL=12Ω
IB1=- IB2=0.5A
VCC=60V
hFE classifications
O
P
Y
50-100 70-140 90-180
Product Specification
2SC3857
MIN TYP. MAX UNIT
200
V
3.0
V
100 μA
100 μA
50
180
20
MHz
250
pF
0.30
μs
2.40
μs
0.40
μs
2
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