C5027E-O 查看數據表（PDF） - Unisonic Technologies
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C5027E-O Datasheet PDF : 4 Pages
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2SC5027E
■ TYPICAL CHARACTERISTICS
4.0
3.6
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0.0
01
Static Characteristic
IB=250 mA
IB=200 mA
IB=150 mA
IB=100 mA
IB =80 mA
IB =60 mA
IB =50 mA
IB =40 mA
IB =30 mA
IB =20 mA
IB =10 mA
IB =0m A
2 3 4 5 6 7 8 9 10
Collectoer-Emitter Voltage, VCE (V)
Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
10
Ic=5IB
1
0.1
0.01
0.01
100us
0.1
1ms
1
10
Collector Current, IC (A)
Switching Time
10
Vcc =400 V
5.IB1= - 2.5.I B2=Ic
1
0.1
0.01
0.1
1ms
1
10
Collector-Emitter Voltage, VCE (V)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
NPN SILICON TRANSISTOR
1000
100
10
DC Current Gain
VCE=5V
1
100us
0.01
0.1
1ms
1
10
Collector Current, IC (A)
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.0
Base-Emitter on Voltage
VCE=5V
0.2 0.4 0.6 0.8 1.0 1.2
Base-Emitter Voltage, VBE (V)
Safe Operating Area
100
IcMAX .( Pulse )
10
IcMAX.(Continuous ) 10 ms
1
DC
0.1
0.01
1E-s
1
10
100
1000
10000
Collector-Emitter Voltage, VCE (V)
3 of 4
QW-R203-030,B
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