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2SC5458 查看數據表(PDF) - Toshiba
零件编号
产品描述 (功能)
生产厂家
2SC5458
TOSHIBA Transistor Silicon NPN Triple Diffused Type
Toshiba
2SC5458 Datasheet PDF : 5 Pages
1
2
3
4
5
V
CE (sat)
– I
C
10
Common emitter
IC/IB = 10
3
1
0.3
0.1
0.03
1
Tc = 100°C
−
55
25
3
10
30
100
300
Collector current I
C
(mA)
1000
2SC5458
3
Common emitter
IC/IB = 5
1
V
CE (sat)
– I
C
0.3
25
Tc = 100°C
0.1
−
55
0.3
0.01
1
3
10
30
100
300
Collector current I
C
(mA)
1000
Safe Operating Area
3
IC max (pulsed)*
1 IC max (continuous)
1 ms*
100
μ
s*
DC operation
Tc = 25°C
0.3
10
μ
s*
10 ms*
0.1
100 ms*
*: Single nonrepetitive pulse
0.03
Tc = 25°C
Curves must be derated
linearly with increase in
temperature.
0.01
1
3
10
30
VCEO max
100
300
Collector-emitter voltage V
CE
(V)
1000
4
2010-02-05
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