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零件编号
产品描述 (功能)
2SC5886A 查看數據表(PDF) - Toshiba
零件编号
产品描述 (功能)
生产厂家
2SC5886A
Silicon NPN Epitaxial Type Transistor
Toshiba
2SC5886A Datasheet PDF : 5 Pages
1
2
3
4
5
I
C
– V
CE
6
Common emitter
70 50 40 30
Tc = 25°C
Pulse test
20
10
4
5
2
2
IB = 1 mA
0
0
2
4
6
8
10
Collector
−
emitter voltage V
CE
(V)
2SC5886A
10000
Common emitter
VCE = 2 V
Pulse test
h
FE
– I
C
1000
100
Tc = 100°C
25
−
55
10
0.001
0.01
0.1
1
10
Collector current I
C
(A)
V
CE (sat)
– I
C
10
Common emitter
IC/IB = 50
Pulse test
1
0.1
0.01
0.001
Tc = 100°C
−
55
25
0.01
0.1
1
10
Collector current I
C
(A)
V
BE (sat)
– I
C
10
Common emitter
IC/IB = 50
Pulse test
1
25
−
55
Tc = 100°C
0.1
0.001
0.01
0.1
1
10
Collector current I
C
(A)
5
Common emitter
VCE = 2 V
Pulse test
4
I
C
– V
BE
3
2
Tc = 100°C
−
55
25
1
0
0
0.4
0.8
1.2
1.6
Base
−
emitter voltage V
BE
(V)
V
CE
– I
B
10
Common emitter
Tc = 25°C
Pulse test
1
3
2
1.6
0.1
IC = 1 A
0.01
0.001
0.01
0.1
1
10
Base current I
B
(A)
3
2013-11-01
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