Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits
English
한국어
日本語
русский
简体中文
español
零件编号
产品描述 (功能)
2SD1445 查看數據表(PDF) - Panasonic Corporation
零件编号
产品描述 (功能)
生产厂家
2SD1445
Power Transistors Silicon NPN epitaxial planar type
Panasonic Corporation
2SD1445 Datasheet PDF : 4 Pages
1
2
3
4
2SD1445, 2SD1445A
Power Transistors
P
C
T
a
80
(1)T
C
=Ta
(2)With a 100
×
100
×
2mm
70
Al heat sink
(3)Without heat sink
(P
C
=2.0W)
60
50
(1)
40
30
20
(2)
10
(3)
0
0 20 40 60 80 100 120 140 160
Ambient temperature T
a
(˚C)
I
C
V
CE
10
T
C
=25
˚
C
I
B
=100mA
8
90mA
80mA
70mA
6
60mA
50mA
40mA
4
30mA
20mA
2
10mA
0
0123456
Collector to emitter voltage V
CE
(V)
V
CE(sat)
I
C
I
C
/I
B
=20
10
3
T
C
=100
˚
C
1
25
˚
C
0.3
–
25
˚
C
0.1
0.03
0.01
0.1 0.3
1
3
10 30
Collector current I
C
(A)
V
BE(sat)
I
C
I
C
/I
B
=20
10
3
25
˚
C
1
–
25
˚
C
0.3
T
C
=100
˚
C
0.1
0.03
0.01
0.1 0.3
1
3
10 30
Collector current I
C
(A)
1000
h
FE
I
C
V
CE
=10V
300
T
C
=100
˚
C
25
˚
C
100
–
25
˚
C
30
10
3
1
0.1 0.3
1
3
10 30
Collector current I
C
(A)
1000
300
100
f
T
I
C
V
CE
=10V
f=10MHz
T
C
=25
˚
C
30
10
3
1
0.3
0.1
0.01 0.03 0.1 0.3 1 3 10
Collector current I
C
(A)
t
on
, t
stg
, t
f
I
C
100
Pulsed t
w
=1ms
Duty cycle=1%
30
I
C
/I
B
=30(I
B1
=
–
I
B2
)
V
CC
=30V
T
C
=25
˚
C
10
3
1
t
on
0.3
t
stg
0.1
t
f
0.03
0.01
0
1
2
3
4
5
Collector current I
C
(A)
Area of safe operation (ASO)
100
30
I
CP
10
I
C
DC
3
Non repetitive pulse
T
C
=25
˚
C
t=10ms
t=1ms
1
0.3
0.1
0.03
0.01
1 3 10 30 100 300 1000
Collector to emitter voltage V
CE
(V)
2
Share Link:
datasheetq.com [
Privacy Policy
]
[
Request Datasheet
] [
Contact Us
]