MBR2060CT 查看數據表（PDF） - Fairchild Semiconductor

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MBR2060CT

Schottky Rectifiers

Fairchild Semiconductor 

MBR2035CT - MBR2060CT

Features

• Low power loss, high efficiency.

• High surge capacity.

• For use in low voltage, high frequency

inverters, free wheeling, and polarity

protection applications.

• Metal silicon junction, majority carrier

conduction.

• High current capacity, low forward

voltage drop.

• Guard ring for over voltage protection.

1

2

3

TO-220AB

PIN 1

PIN 3

+

CASE

PIN 2

Schottky Rectifiers

Absolute Maximum Ratings* TA = 25°C unless otherwise noted

Symbol

Parameter

Value

2035CT 2045CT 2050CT

VRRM

IF(AV)

IFSM

Tstg

TJ

Maximum Repetitive Reverse Voltage

Average Rectified Forward Current

.375 " lead length @ TA = 135°C

Non-repetitive Peak Forward Surge Current

8.3 ms Single Half-Sine-Wave

Storage Temperature Range

Operating Junction Temperature

35

45

50

20

150

-65 to +175

-65 to +150

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

2060CT

60

Units

V

A

A

°C

°C

Thermal Characteristics

Symbol

Parameter

PD

Power Dissipation

RθJA

Thermal Resistance, Junction to Ambient *

RθJL

Thermal Resistance, Junction to Lead

Value

2.0

60

2.0

Units

W

°C/W

°C/W

Electrical Characteristics TA = 25°C unless otherwise noted

Symbol

Parameter

VF

Forward Voltage IF = 10 A, TC = 25°C

IF = 10 A, TC = 125°C

IF = 20 A, TC = 25°C

IF = 20 A, TC = 125°C

IR

Reverse Current @ rated VR TA = 25°C

TA = 125°C

IRRM

Peak Repetitive Reverse Surge Current

2.0 us Pulse Width, f = 1.0 KHz

Device

2035CT 2045CT

-

0.57

0.84

0.72

2050CT 2060CT

0.80

0.70

0.95

0.85

0.1

0.15

15

150

1.0

0.5

Units

V

V

V

V

mA

mA

A

2001 Fairchild Semiconductor Corporation

MBR2035CT - MBR2060CT, Rev. C

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