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2SD2604 查看數據表(PDF) - Toshiba
零件编号
产品描述 (功能)
生产厂家
2SD2604
Silicon NPN Triple Diffused Type (Darlington) Transistor
Toshiba
2SD2604 Datasheet PDF : 5 Pages
1
2
3
4
5
5
Common emitter
VCE = 3 V
4
I
C
– V
BE
3
2
1
Tc = 100°C 25
−
55
0
0
0.5
1.0
1.5
2.0
2.5
3.0
Base-emitter voltage V
BE
(V)
2SD2604
Safe Operating Area
30
IC max
(pulsed)
*
10
IC max
(continuous)
100 ms
*
10 ms
*
100
μ
s
*
20
μ
s
*
3
1 ms
*
DC operation
1
Tc = 25°C
0.3
0.1
0.03
*
: Single nonrepetitive pulse
Tc = 25°C
Curves must be derated linearly
with increase in temperature.
0.01
1
3
10
30
VCEO
max
100
300
Collector-emitter voltage V
CE
(V)
4
2006-11-21
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