Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=50mA; IB=0
VCEsat Collector-emitter saturation voltage IC=4A; IB=0.4A
VBEsat Base-emitter saturation voltage
IC=4A; IB=0.4A
ICBO
IEBO
hFE-1
Collector cut-off current
Emitter cut-off current
DC current gain
VCB=70V; IE=0
VEB=5V; IC=0
IC=1A ; VCE=1V
hFE-2
DC current gain
IC=4A ; VCE=1V
COB
Output capacitance
IE=0 ; VCB=10V;f=1MHz
fT
Transition frequency
IC=1A ; VCE=4V
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IB1=- IB2=0.3A
RL=10Ω; VCC=30V
hFE-1Classifications
O
Y
70-140
120-240
Product Specification
2SD553
MIN TYP. MAX UNIT
50
V
0.2
0.4
V
0.9
1.2
V
30
μA
50
μA
70
240
30
250
pF
10
MHz
0.2
μs
2.5
μs
0.5
μs
2