SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD553
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=50mA; IB=0
VCEsat Collector-emitter saturation voltage IC=4A; IB=0.4A
VBEsat
Base-emitter saturation voltage
IC=4A; IB=0.4A
ICBO
Collector cut-off current
VCB=70V; IE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=1A ; VCE=1V
hFE-2
DC current gain
IC=4A ; VCE=1V
COB
Output capacitance
IE=0 ; VCB=10V;f=1MHz
fT
Transition frequency
IC=1A ; VCE=4V
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IB1=- IB2=0.3A
RL=10?; VCC=30V
MIN TYP. MAX UNIT
50
V
0.2
0.4
V
0.9
1.2
V
30
µA
50
µA
70
240
30
250
pF
10
MHz
0.2
µs
2.5
µs
0.5
µs
hFE-1Classifications
O
Y
70-140
120-240
2