D843 查看數據表（PDF） - Inchange Semiconductor

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D843

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

2SD843

DESCRIPTION

·High Collector Current:: IC= 7A

·Low Collector Saturation Voltage

: VCE(sat)= 0.5V(Max)@IC= 4A

·High Collector Power Dissipation

·Complement to Type 2SB753

APPLICATIONS

·High current switching applications

·Power amplifier applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO Collector-Base Voltage

100

V

VCEO Collector-Emitter Voltage

80

V

VEBO Emitter-Base Voltage

5

V

IC

Collector Current-Continuous

Collector Power Dissipation

@ Ta=25℃

PC

Total Power Dissipation

@ TC=25℃

TJ

Junction Temperature

Tstg

Storage Temperature Range

7

A

1.5

W

40

150

℃

-55~150 ℃

isc Website：www.iscsemi.cn

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