D847 查看數據表（PDF） - Inchange Semiconductor

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D847

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

2SD847

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0

V(BR)CBO Collector-Base Breakdown Voltage

IC= 0.1mA ; IE= 0

V(BR)EBO Emitter-Base Breakdown Voltage

IE= 0.1mA ; IC= 0

VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A

VBE(sat) Base-Emitter Saturation Voltage

IC= 5A; IB= 0.5A

ICBO

Collector Cutoff Current

VCB= 40V ; IE= 0

IEBO

Emitter Cutoff Current

VEB= 5V; IC= 0

hFE

DC Current Gain

IC= 5A ; VCE= 2V

Switching times

ton

Turn-on Time

tstg

Storage Time

tf

Fall Time

IC= 15A , IB1= -IB2= 1.5A

RL= 2Ω;PW=20μs

Duty Cycle≤2%

MIN TYP. MAX UNIT

40

V

40

V

5

V

0.8 V

1.8 V

0.01 mA

0.1 mA

40

240

1.0 μs

2.0 μs

1.0 μs

isc Website：www.iscsemi.cn

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