D844 查看數據表（PDF） - SavantIC Semiconductor
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D844 Datasheet PDF : 3 Pages
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SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD844
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;IB=0
V(BR)EBO Emitter-base breakdown voltage
IE=10mA; IC=0
VCEsat Collector-emitter saturation voltage IC=4.0A; IB=0.4A
VBE
Base-emitter voltage
IC=4A ; VCE=1V
ICBO
Collector cut-off current
VCB=50V; IE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=1A ; VCE=1V
hFE-2
DC current gain
IC=4A ; VCE=1V
fT
Transition frequency
IC=1A ; VCE=5V
COB
Collector output capacitance
f=1MHz ; VCB=10V
MIN TYP. MAX UNIT
50
V
5
V
0.4
V
1.2
V
10
µA
10
µA
70
240
30
15
MHz
250
pF
hFE-1 Classifications
O
Y
70-140
120-240
2
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