D845 查看數據表（PDF） - Micro Commercial Components

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产品描述 (功能)

生产厂家

D845

NPN EPITAXIAL TRANSISTOR

Micro Commercial Components 

MCC

 omponents

21201 Itasca Street Chatsworth



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Features

• With TO-3P(I) package

• Recommended for 60~80W high-fidelity frequency amplifier output

stage

Maximum Ratings

Symbol

VCEO

VCBO

VEBO

IC

PC

TJ

TSTG

Rating

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current

Collector power dissipation

Junction Temperature

Storage Temperature

Rating

Unit

150

V

150

V

5.0

V

12

A

120

W

-55 to +150

OC

-55 to +150

OC

2SD845

NPN Silicon

Power Transistors

TO-3P(I)

Electrical Characteristics @ 25OC Unless Otherwise Specified

Symbol

Parameter

OFF CHARACTERISTICS

Min

Max Units

V(BR)CEO Collector-Emitter Breakdown Voltage

150

(IC=50mAdc, IB=0)

ICBO

Collector-Base Cutoff Current

---

(VCB=150Vdc,IE=0)

IEBO

Emitter-Base Cutoff Current

---

(VEB=5.0Vdc, IC=0)

ON CHARACTERISTICS

---

Vdc

50

uAdc

50

uAdc

hFE

Forward Current Transfer ratio

100

(IC=1.0Adc, VCE=5.0Vdc)

VCE(sat) Collector-Emitter Saturation Voltage

---

(IC=5.0Adc, IB=0.5Adc)

---

---

2.0 Vdc

DIMENSIONS

INCHES

DIM

MIN

MAX

A

---

.130

B

---

.071

C

.079

D

.067

.091

E

.030

.051

F

.012

.028

G

---

.626

H

.205

.220

I

.207

.222

J

.118

.134

K

.039

L

.079

M

.748

.827

N

.177

O

.354

P

.110

Q

.067

.091

R

.512

.551

S

---

.189

MM

MIN

MAX

---

3.30

---

1.80

2.00

1.70

2.30

.75

1.30

.30

.70

---

15.90

5.20

5.60

5.25

5.65

3.00

3.40

1.00

2.00

19.00

21.00

4.50

9.00

2.80

1.70

2.30

13.00

14.00

---

4.80

NOTE

∅

www.mccsemi.com

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