D847 查看數據表（PDF） - SavantIC Semiconductor

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D847

NPN EPITAXIAL TRANSISTOR

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon NPN Power Transistors

Product Specification

2SD847

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CBO Collector-base breakdown voltage

IC=0.1mA; IE=0

V(BR)CEO Collector-emitter breakdown voltage IC=10mA; IB=0

V(BR)EBO Emitter-base breakdown voltage

IE=0.1mA; IC=0

VCE(sat) Collector-emitter saturation voltage IC=5A; IB=0.5A

VBE(sat) Base-emitter saturation voltage

IC=5A; IB=0.5A

ICBO

Collector cut-off current

VCB=40V; IE=0

IEBO

Emitter cut-off current

VEB=5V; IC=0

hFE

DC current gain

IC=5A ; VCE=2V

Switching times

ton

Turn-on time

ts

Storage time

tf

Fall time

IC=15A;IB1=-IB2=1.5A

RL=2@;PW=20µs,DutyB2%

MIN TYP. MAX UNIT

40

V

40

V

5

V

0.8

V

1.0

V

10 µA

100 µA

40

240

1.0 µs

2.0 µs

1.0 µs

2

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