2SJ451 查看數據表（PDF） - Renesas Electronics
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2SJ451 Datasheet PDF : 7 Pages
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2SJ451
Static Drain to Source on State Resistance
vs. Temperature
10
Pulse Test
8
VGS = –2.5 V
–0.1 A
6
ID = –0.05 A
4
–0.2 A
2
–4 V
–0.05 A, –0.1 A
0
–40 0
40 80 120 160
Case Temperature Tc (°C)
Typical Capacitance vs.
Drain to Source Voltage
100
Coss
30
10
Ciss
3
1
Crss
0.3
0.1
0
VGS = 0
f = 1 MHz
–10 –20 –30 –40 –50
Drain to Source Voltage VDS (V)
Reverse Drain Current vs.
Source to Drain Voltage
–0.5
Pulse Test
–0.4
–5 V
–0.3
–0.2
–0.1
VGS = 0
0
0 –0.4 –0.8 –1.2 –1.6 –2.0
Source to Drain Voltage VSD (V)
Forward Transfer Admittance vs.
Drain Current
2
1
0.5
Tc = –25°C
0.2
0.1
75°C
0.05
25°C
0.02
0.01
0.005
0.002
–0.01 –0.03 –0.1 –0.3
VDS = –10 V
Pulse Test
–1 –3 –10
Drain Current ID (A)
Switching Characteristics
10
VGS = –10 V, VDD = –10 V
5 PW = 50 µs, duty ≤ 1 %
tf
2
td(off)
1
tr
0.5
0.2
td(on)
0.1
–0.01 –0.02 –0.05 –0.1 –0.2 –0.5 –1
Drain Current ID (A)
REJ03G864-0400 Rev.4.00 Sep 07, 2007
Page 4 of 6
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