2SJ618_09 查看數據表（PDF） - Toshiba
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2SJ618_09 Datasheet PDF : 5 Pages
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Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Drain cut−off current
Gate leakage current
Drain-source breakdown voltage
Drain-source saturation voltage
Gate threshold voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
IDSS
IGSS
V (BR) DSS
VDS (ON)
Vth
|Yfs|
Ciss
Coss
Crss
VDS = −180 V, VGS = 0 V
VDS = 0, VGS = ±12 V
ID = −10 mA, VGS = 0
ID = −5 A, VGS = −7 V
VDS = 10 V, ID = 1 mA
VDS = −10 V, ID = −5 A
VDS = −30 V, VGS = 0, f = 1 MHz
This transistor is the electrostatic-sensitive device. Plese handle with caution.
Marking
2SJ618
Min Typ. Max Unit
⎯
⎯ −100 μA
⎯
⎯
±10
μA
−180 ⎯
⎯
V
⎯
⎯ −1.85 V
−1.1
⎯
−2.1
V
6.0 12.0 ⎯
S
⎯ 2300 ⎯
⎯ 330 ⎯
pF
⎯
65
⎯
TOSHIBA
J618
Part No. (or abbreviation code)
Lot No.
Note 3
Note 3: A line under a Lot No. identifies the indication of product Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS
compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27
January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment.
2
2009-09-29
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