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2SJ618_09 查看數據表(PDF) - Toshiba
零件编号
产品描述 (功能)
生产厂家
2SJ618_09
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type(π-MOSⅤ)
Toshiba
2SJ618_09 Datasheet PDF : 5 Pages
1
2
3
4
5
−
20
Common source
Tc
=
25°C
Pulse test
−
16
I
D
– V
DS
−
4
−
3.5
−
12
−
8
−
3
−
4
VGS
= −
2.5 V
0
0
−
2
−
4
−
6
−
8
−
10
Drain-source voltage V
DS
(V)
2SJ618
−
10
Common source
VDS
= −
10V
Pulse test
−
8
I
D
– V
GS
−
6
−
4
Tc
=
100°C
−
2
25
−
55
0
0
−
1
−
2
−
3
−
4
−
5
Gate-source voltage V
GS
(V)
100
Common source
VDS
= −
10 V
Pulse test
⎪
Y
fs
⎪
– I
D
10
Tc
= −
55 °C
100
25
1
0.1
−
0.1
−
1
−
10
Drain current I
D
(A)
V
DS (ON)
– Tc
5
Common source
VGS
= −
7 V
Pulse test
4
ID
= −
10 A
3
−
2.5
−
5
2
1
0
−
80
−
40
0
40
80
120
160
Case temperature Tc (°C)
10000
1000
Capacitance – V
DS
Ciss
Coss
100
Common source
VGS
=
0 V
f = 1 MHZ
Tc
=
25°C
10
0.1
1
Crss
10
100
Drain-source voltage V
DS
(V)
150
120
90
60
30
0
0
P
D
– Tc
40
80
120
160
Case temperature Tc (°C)
3
2009-09-29
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