K1382 查看數據表（PDF） - Toshiba
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K1382 Datasheet PDF : 6 Pages
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2SK1382
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2−π−MOSIII)
2SK1382
Relay Drive, Motor Drive and DC−DC Converter
Applications
Unit: mm
l 4 V gate drive
l Low drain−source ON resistance : RDS (ON) = 15 mΩ (typ.)
l High forward transfer admittance : |Yfs| = 47 S (typ.)
l Low leakage current
: IDSS = 100 µA (max) (VDS = 100 V)
l Enhancement−mode
: Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain−source voltage
VDSS
100
V
Drain−gate voltage (RGS = 20 kΩ)
VDGR
100
V
Gate−source voltage
VGSS
±20
V
Drain current
DC (Note 1)
ID
Pulse (Note 1)
IDP
60
A
240
Drain power dissipation (Tc = 25°C)
PD
200
W
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55~150
°C
Thermal Characteristics
JEDEC
―
JEITA
―
TOSHIBA
2-21F1B
Weight: 9.75 g (typ.)
Characteristics
Thermal resistance, channel to case
Thermal resistance, channel to
ambient
Symbol
Rth (ch−c)
Rth (ch−a)
Max
0.625
35.7
Unit
°C / W
°C / W
Note 1: Please use devices on condition that the channel temperature is below 150°C.
This transistor is an electrostatic sensitive device.
Please handle with caution.
1
2002-09-04
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