2SK1401 查看數據表（PDF） - Hitachi -> Renesas Electronics

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2SK1401

Silicon N-Channel MOS FET

Hitachi -> Renesas Electronics 

2SK1401, 2SK1401A

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min

Drain to source

K1401 V(BR)DSS 300

breakdown voltage K1401A

350

Gate to source breakdown

voltage

V(BR)GSS ±30

Gate to source leak current

I GSS

—

Zero gate voltage K1401 IDSS

—

drain current

K1401A

Gate to source cutoff voltage VGS(off) 2.0

Static drain to source K1401 RDS(on) —

on state resistance K1401A

—

Forward transfer admittance |yfs|

6

Input capacitance

Ciss —

Output capacitance

Coss —

Reverse transfer capacitance Crss —

Turn-on delay time

t d(on)

—

Rise time

tr

—

Turn-off delay time

t d(off)

—

Fall time

tf

—

Body to drain diode forward VDF

—

voltage

Body to drain diode reverse trr

—

recovery time

Note: 1. Pulse test

Typ Max

—

—

—

—

—

—

—

±10

—

250

—

3.0

0.25 0.35

0.30 0.40

9.5

—

1250 —

420 —

70

—

15

—

80

—

100 —

55

—

1.05 —

370 —

Unit

V

V

µA

µA

V

Ω

S

pF

pF

pF

ns

ns

ns

ns

V

ns

Test conditions

ID = 10 mA, VGS = 0

IG = ±100 µA, VDS = 0

VGS = ±25 V, VDS = 0

VDS = 240 V, VGS = 0

VDS = 280 V, VGS = 0

ID = 1 mA, VDS = 10 V

ID = 8 A, VGS = 10 V *1

ID = 8 A, VDS = 10 V *1

VDS = 10 V, VGS = 0,

f = 1 MHz

ID = 8 A, VGS = 10 V,

RL = 3.75 Ω

IF = 15 A, VGS = 0

IF = 15 A, VGS = 0,

diF/dt = 100 A/µs

3

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