2SK1835 查看數據表（PDF） - Hitachi -> Renesas Electronics

零件编号

产品描述 (功能)

生产厂家

2SK1835

Silicon N-Channel MOS FET

Hitachi -> Renesas Electronics 

2SK1835

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min Typ

Drain to source breakdown

voltage

V(BR)DSS

1500 —

Gate to source leak current IGSS

—

—

Zero gate voltage drain current IDSS

—

—

Gate to source cutoff voltage VGS(off)

2.0

—

Static drain to source on state RDS(on)

—

4.6

resistance

Forward transfer admittance |yfs|

0.9 1.4

Max

—

±1

500

4.0

7.0

—

Input capacitance

Ciss

—

Output capacitance

Coss —

Reverse transfer capacitance Crss

—

Turn-on delay time

t d(on)

—

Rise time

tr

—

Turn-off delay time

t d(off)

—

Fall time

tf

—

Body to drain diode forward VDF

—

voltage

Body to drain diode reverse trr

—

recovery time

Note 1. Pulse Test

1700 —

230 —

100 —

25

—

80

—

230 —

80

—

0.85 —

2500 —

Unit

V

µA

µA

V

Ω

S

pF

pF

pF

ns

ns

ns

ns

V

ns

Test Conditions

ID = 10 mA, VGS = 0

VGS = ±20 V, VDS = 0

VDS = 1200 V, VGS = 0

ID = 1 mA, VDS = 10 V

ID = 2 A

VGS = 15 V*1

ID = 2 A

VDS = 20V*1

VDS = 10 V

VGS = 0

f = 1 MHz

ID = 2A

VGS = 10 V

RL = 15 Ω

IF = 4 A, VGS = 0

IF = 4 A, VGS = 0,

diF / dt = 100 A / µs

3

Share Link: