2SK1862 查看數據表（PDF） - Hitachi -> Renesas Electronics

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2SK1862

Silicon N-Channel MOS FET

Hitachi -> Renesas Electronics 

2SK1862, 2SK1863

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min Typ

Drain to source 2SK1862

V(BR)DSS

450

—

breakdown

2SK1863

500

voltage

Gate to source breakdown

voltage

V(BR)GSS

±30

—

Gate to source leak current IGSS

Zero gate

2SK1862 IDSS

voltage drain

current

2SK1863

—

—

—

—

Gate to source cutoff voltage VGS(off)

2.0

—

Static drain to 2SK1862 RDS(on)

—

2.0

source on state 2SK1863

resistance

—

2.2

Forward transfer admittance |yfs|

1.5 2.5

Input capacitance

Ciss

—

330

Output capacitance

Coss —

90

Reverse transfer capacitance Crss

—

15

Turn-on delay time

t d(on)

Rise time

tr

Turn-off delay time

t d(off)

Fall time

tf

Body to drain diode forward VDF

voltage

—

7

—

20

—

30

—

20

—

0.9

Body to drain diode reverse trr

recovery time

—

300

Note 1. Pulse Test

Max Unit

—

V

—

V

±10 µA

250 µA

3.0 V

2.8 Ω

3.0

—

S

—

pF

—

pF

—

pF

—

ns

—

ns

—

ns

—

ns

—

V

—

ns

Test conditions

ID = 10 mA, VGS = 0

IG = ±100 µA, VDS = 0

VGS = ±25 V, VDS = 0

VDS = 360 V, VGS = 0

VDS = 400 V, VGS = 0

ID = 1 mA, VDS = 10 V

ID = 2 A, VGS = 10 V*1

ID = 2 A

VDS = 10 V*1

VDS = 10 V

VGS = 0

f = 1 MHz

ID = 2 A

VGS = 10 V

RL = 15 Ω

IF = 3 A, VGS = 0

IF = 3 A, VGS = 0,

diF / dt = 100 A / µs

See characteristic curves of 2SK1153, 2SK1154

3

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