DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

K2366 查看數據表(PDF) - NEC => Renesas Technology

零件编号
产品描述 (功能)
生产厂家
K2366
NEC
NEC => Renesas Technology NEC
K2366 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
2SK2365/2SK2366
TYPICAL CHARACTERISTICS (TA = 25 ˚C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
60
40
20
0 20 40 60 80 100 120 140 160
TC - Case Temperature - ˚C
FORWARD BIAS SAFE OPERATING AREA
100
ID (pulse) PW
10
1.0
RD(Sat(onV) GLSimI=Dit1(De0Cd)V)
Power
100
Dissipa1ti0o0n1mL0imsmitse1dms
=
µs
10
µs
2SK2366
2SK2365
TC = 25 ˚C
Single Pulse
0.1
1
10
100
1 000
VDS - Drain to Source Voltage - V
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
100
Pulsed
10
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
100
80
60
40
20
0 20 40 60 80 100 120 140 160
TC - Case Temperature - ˚C
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
24
Pulsed
20
VGS = 20 V
10 V
16
8V
6V
12
8
4
0
4
8
12
16
VDS - Drain to Source Voltage - V
1
TA = 125 ˚C
75 ˚C
25 ˚C
–25 ˚C
0.1
0
5
10
15
VGS - Gate to Source Voltage - V
3

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]