K2366 查看數據表（PDF） - NEC => Renesas Technology
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K2366 Datasheet PDF : 8 Pages
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2SK2365/2SK2366
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
1.5
1.0
ID = 10 A
5A
0.5
VGS = 10 V
0
–50
0
50
100 150
Tch - Channel Temperature - ˚C
0
10 000
1 000
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
VGS = 0
f = 1 MHz
Ciss
Coss
100
Crss
10
1
10
100
1 000
VDS - Drain to Source Voltage - V
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
Pulsed
100
10
VGS = 10 V
1.0
VGS = 0
0.1
0
0.5
1.0
1.5
VSD - Source to Drain Voltage - V
1 000
100
10
SWITCHING CHARACTERISTICS
tr
tf
td (on)
td (off)
1.0
0.1
VDS = 150 V
VGS = 10 V
RG = 10 Ω
1.0
10
100
ID - Drain Current - A
10 000
1 000
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
di/dt = 50 A/µs
VGS = 0
100
10
0.1
1.0
10
100
ID - Drain Current - A
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
400
16
ID = 10 A
14
VDD = 400 V
300
250 V
12
125 V
VGS
10
200
8
6
100
4
VDS
2
0
10
20
30
40
Qg - Gate Charge - nC
5
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