HVX-2 Series Power MOSFET
2SK2675 ( FP7W90HVX2 )
Electrical Characteristics Tc = 25
Item
Symbol
Conditions
Drain-Source Breakdown Voltage
V(BR)DSS ID = 1mA, VGS = 0V
Zero Gate Voltage Drain Current
IDSS VDS = 900V, VGS = 0V
Gate-Source Leakage Current
IGSS VGS = }30V, VDS = 0V
Forward Tran]conductance
gfs ID = 3. 5A, VDS = 10V
Static Drain-Source On-]tate Resistance RDS(ON) ID = 3.5A, VGS = 10V
Gate Threshold Voltage
VTH ID = 1mA, VDS = 10V
Source-Drain Diode Forward Voltage
VSD IS = 3.5A, VGS = 0V
Thermal Resistance
Æjc junction to case
Total Gate Charge
Qg VDD = 400V, VGS = 10V, ID = 7A
Input Capacitance
Ciss
Reverse Transfer Capacitance
Crss VDS = 25V, VGS = 0V, f = 1MHZ
Output Capacitance
Coss
Turn-On Time
ton ID = 3. 5A, RL = 43¶, VGS = 10V
Turn-Off Time
toff
Min. Typ. Max. Unit
900
V
250 ÊA
}0. 1
3. 6 6. 0
S
1. 5 2. 0 ¶
2. 5 3. 0 3. 5 V
1. 5
2. 27 /L
63
nC
1450
37
pF
150
95 170 ns
330 560
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