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零件编号
产品描述 (功能)
2SK3070 查看數據表(PDF) - Hitachi -> Renesas Electronics
零件编号
产品描述 (功能)
生产厂家
2SK3070
Silicon N Channel MOS FET High Speed Power Switching
Hitachi -> Renesas Electronics
2SK3070 Datasheet PDF : 10 Pages
1
2
3
4
5
6
7
8
9
10
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
0.5
Pulse Test
0.4
0.3
I
D
= 50 A
0.2
0.1
10 A
20 A
0
4
8
12 16 20
Gate to Source Voltage V
GS
(V)
Datasheet Title
Static Drain to Source on State Resistance
vs. Drain Current
100
Pulse Test
50
20
10
V
GS
= 4 V
5
10 V
2
1
1 3 10
30 100 300
1000
Drain Current I
D
(A)
Static Drain to Source on State Resistance
vs. Temperature
20
Pulse Test
16
12
I
D
= 50 A
8
V
GS
= 10 V
10, 20 A
4
4V
10, 20, 50 A
0
–50 0
50 100 150 200
Case Temperature Tc (
°
C)
Forward Transfer Admittance vs.
Drain Current
500
V
DS
= 10 V
200 Pulse Test
100
50
Tc = –25
°
C
20
10
25
°
C
5
75
°
C
2
1
0.5
0.1 0.3 1 3
10 30 100
Drain Current I
D
(A)
5
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