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零件编号
产品描述 (功能)
2SK3076 查看數據表(PDF) - Hitachi -> Renesas Electronics
零件编号
产品描述 (功能)
生产厂家
2SK3076
Silicon N Channel MOS FET High Speed Power Switching
Hitachi -> Renesas Electronics
2SK3076 Datasheet PDF : 9 Pages
1
2
3
4
5
6
7
8
9
2SK3076(L),2SK3076(S)
Reverse Drain Current vs.
Source to Drain Voltage
20
16
12
V
GS
= 0, –10 V
8
10 V
15 V
4
Pulse Test
0
0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage V
SD
(V)
Normalized Transient Thermal Impedance vs. Pulse Width
3
1
D=1
Tc = 25°C
0.5
0.3
0.2
0.1
0.1
0.05
0.03
0.02
0.011shot
pulse
0.01
10 µ
100 µ
θ
ch – c(t) =
γ
s (t) •
θ
ch – c
θ
ch – c = 2.08 °C/W, Tc = 25 °C
PDM
PW
T
D=
PW
T
1m
10 m
100 m
1
10
Pulse Width PW (S)
6
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