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零件编号
产品描述 (功能)
2SK3564(2006) 查看數據表(PDF) - Toshiba
零件编号
产品描述 (功能)
生产厂家
2SK3564
(Rev.:2006)
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIV)
Toshiba
2SK3564 Datasheet PDF : 6 Pages
1
2
3
4
5
6
I
D
– V
DS
4
COMMON SOURCE
Tc
=
25°C
PULSE TEST
10
8
3
6
5.5
2
5.25
5
1
4.75
0
VGS
=
4.5 V
0
4
8
12
16
20
24
DRAIN-SOURCE VOLTAGE V
DS
(V)
2SK3564
I
D
– V
DS
5
COMMON SOURCE
10
8
Tc
=
25°C
PULSE TEST
4
6
3
5.5
2
5.25
5
1
4.75
VGS
=
4.5 V
0
0
10
20
30
40
DRAIN-SOURCE VOLTAGE V
DS
(V)
I
D
– V
GS
6
COMMON SOURCE
5 VDS
=
20 V
PULSE TEST
4
3
2
Tc
= −
55°C
100
1
25
0
0
2
4
6
8
10
12
GATE-SOURCE VOLTAGE V
GS
(V)
V
DS
– V
GS
25
COMMON SOURCE
Tc
=
25
℃
20
PULSE TEST
15
ID
=
3 A
10
1.5
5
0.8
0
0
4
8
12
16
20
GATE-SOURCE VOLTAGE V
GS
(V)
⎪
Y
fs
⎪
– I
D
10
Tc
= −
55°C
25
1
100
0.1
0.01
0.01
COMMON SOURCE
VDS
=
20 V
PULSE TEST
0.1
1
10
DRAIN CURRENT I
D
(A)
R
DS (ON)
– I
D
10
COMMON SOURCE
Tc
=
25°C
PULSE TEST
5
VGS
=
10 V
3
1
0.01
0.1
1
10
DRAIN CURRENT I
D
(A)
3
2006-11-10
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