MC33970DWR2 查看數據表（PDF） - Freescale Semiconductor

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MC33970DWR2

Dual Gauge Driver Integrated Circuit with Improved Damping Algorithms

Freescale Semiconductor 

ELECTRICAL CHARACTERISTICS

STATIC ELECTRICAL CHARACTERISTICS

Table 3. Static Electrical Characteristics (continued)

Characteristics noted under conditions 4.75 V < VDD < 5.25 V, -40°C < TA < 125°C, GND = 0 V unless otherwise noted. Typical

values noted reflect the approximate parameter means at TA = 25°C under nominal conditions unless otherwise noted.

Characteristic

Symbol

Min

Typ

Max

Unit

POWER OUTPUTS (continued)

Output Flyback Clamp (10)

Output Current Limit (Output = VST6)

Overtemperature Shutdown (10)

Overtemperature Hysteresis (10)

CONTROL I/O

Input Logic High Voltage (11)

Input Logic Low Voltage (11)

Input Logic Voltage Hysteresis (10)

Input Logic Pull Down Current (SI, SCLK)

Input Logic Pull-Up Current (CS, RST)

SO High-State Output Voltage (IOH = 1.0 mA)

SO Low-State Output Voltage (IOL = -1.6 mA)

SO Tri-State Leakage Current (CS ≥ 3.5 V)

Input Capacitance (12)

SO Tri-State Capacitance (12)

ANALOG TO DIGITAL CONVERTER (RTZ ACCUMULATOR COUNT)

ADC Gain (10), (13)

VFB

ILIM

OTSD

OTHYST

–

VST6 + 0.5 VST6 + 1.0

V

40

100

170

mA

155

–

180

°C

8.0

–

16

°C

VIH

2.0

–

–

V

VIL

–

–

0.8

V

VIN(HYST)

–

100

–

mV

IDWN

3.0

–

20

µA

IUP

5.0

–

20

µA

VSOH

0.8 VDD

–

–

V

VSOL

–

0.2

0.4

V

ISOLK

-5.0

0

5.0

µA

CIN

–

4.0

12

pF

CSO

–

–

20

pF

GADC

100

188

270 Counts/V/

ms

Notes

10. This parameter is guaranteed by design; however, it is not production tested.

11. VDD = 5.0 V.

12. Capacitance not measured. This parameter is guaranteed by design; however, it is not production tested.

13. Reference Figure 8, RTZ Accumulator (Typical)

33970

6

Analog Integrated Circuit Device Data

Freescale Semiconductor

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