3SK232 查看數據表（PDF） - Toshiba
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3SK232 Datasheet PDF : 4 Pages
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3SK232
TOSHIBA Field Effect Transistor Silicon N-Channel Dual Gate MOS Type
3SK232
TV Tuner, UHF RF Amplifier Applications
Unit: mm
• Superior cross modulation performance.
• Low reverse transfer capacitance.: Crss = 20 fF (typ.)
• Low noise figure.: NF = 1.5dB (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Gate 1-source voltage
Gate 2-source voltage
Drain current
Drain power dissipation
Channel temperature
Storage temperature range
VDS
VG1S
VG2S
ID
PD
Tch
Tstg
12.5
V
±8
V
±8
V
30
mA
150
mW
125
°C
−55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
JEDEC
―
temperature, etc.) may cause this product to decrease in the
JEITA
―
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
TOSHIBA
2-3J1A
absolute maximum ratings.
Weight: 0.013 g (typ.)
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate 1 leakage current
Gate 2 leakage current
Drain-source voltage
Drain current
Gate 1-source cut-off voltage
Gate 2-source cut-off voltage
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Power gain
Noise figure
Symbol
Test Condition
Min Typ. Max Unit
IG1SS
IG2SS
VDS = 0, VG1S = ±6 V, VG2S = 0
VDS = 0, VG1S = 0, VG2S = ±6 V
⎯
⎯
±50
nA
⎯
⎯
±50
nA
V (BR) DSX
VG1S = −0.5 V, VG2S = −0.5 V
ID = 100 μA
12.5 ⎯
⎯
V
IDSS
VDS = 6 V, VG2S = 4.5 V, VG1S = 0 V
⎯
⎯
0.1 mA
VG1S (OFF) VDS = 6 V, VG2S = 4.5 V, ID = 100 μA
0.4
0.9
1.4
V
VG2S (OFF) VDS = 6 V, VG1S = 4.0 V, ID = 100 μA
0.5
1.0
1.5
V
VDS = 6 V, VG2S = 4.5 V, ID = 10 mA
⎪Yfs⎪
17
21
⎯
mS
f = 1 kHz
Ciss
VDS = 6 V, VG2S = 4.5 V, ID = 10 mA
0.9
1.5
2.1
pF
Crss
f = 1 MHz
⎯
20
40
fF
Gps
VDS = 6 V, VG2S = 4.5 V, ID = 10 mA
18
20
⎯
dB
NF
f = 800 MHz (Figure 1)
⎯
1.5
2.5
dB
1
2007-11-01
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