AM28F010A-70FI 查看數據表（PDF） - Advanced Micro Devices

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AM28F010A-70FI

1 megabit CMOS 12.0 volt, bulk erase flash memory with embedded algorithms

Advanced Micro Devices 

CE#

WE#

tOEH

OE#

Data

DQ0–DQ7

DQ6 =

DQ6 =

*

DQ6

DQ0–DQ7

Stop Toggling

Valid

tOE

Note:

*DQ6 stops toggling (The device has completed the Embedded operation.)

Figure 6. AC Waveforms for Toggle Bit during Embedded Algorithm Operations

16778D-11

DQ5

Exceeded Timing Limits

DQ5 will indicate if the program or erase time has

exceeded the specified limits. This is a failure condi-

tion and the device may not be used again (internal

pulse count exceeded). Under these conditions DQ5

will produce a “1.” The program or erase cycle was not

successfully completed. Data# Polling is the only op-

erating function of the device under this condition. The

CE# circuit will partially power down the device under

these conditions (to approximately 2 mA). The OE#

and WE# pins will control the output disable functions

as described in the Command Definitions table in the

corresponding device data sheet.

Parallel Device Erasure

The Embedded Erase algorithm greatly simplifies par-

allel device erasure. Since the erase process is internal

to the device, a single erase command can be given to

multiple devices concurrently. By implementing a paral-

lel erase algorithm, total erase time may be minimized.

Note that the Flash memories may erase at different

rates. If this is the case, when a device is completely

erased, use a masking code to prevent further erasure

(over-erasure). The other devices will continue to erase

until verified. The masking code applied could be the

read command (00h).

Power-Up/Power-Down Sequence

The device powers-up in the Read only mode. Power

supply sequencing is not required. Note that if VCC ≤

1.0 Volt, the voltage difference between VPP and VCC

should not exceed 10.0 Volts. Also, the device has a

rise VPP rise time and fall time specification of 500 ns

minimum.

Reset Command

The Reset command initializes the Flash memory de-

vice to the Read mode. In addition, it also provides the

user with a safe method to abort any device operation

(including program or erase).

The Reset must be written two consecutive times after

the Setup Program command (10h or 50h). This will

reset the device to the Read mode.

Following any other Flash command, write the Reset

command once to the device. This will safely abort any

previous operation and initialize the device to the Read

mode.

The Setup Program command (10h or 50h) is the only

command that requires a two-sequence reset cycle. The

first Reset command is interpreted as program data.

However, FFh data is considered as null data during pro-

gramming operations (memory cells are only pro-

grammed from a logical “1" to “0"). The second Reset

command safely aborts the programming operation and

resets the device to the Read mode.

Memory contents are not altered in any case.

Am28F010A

17

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