AM28F010A-70EEB 查看數據表（PDF） - Advanced Micro Devices

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AM28F010A-70EEB

1 megabit CMOS 12.0 volt, bulk erase flash memory with embedded algorithms

Advanced Micro Devices 

This detailed information is for your reference. It may

prove easier to always issue the Reset command two

consecutive times. This eliminates the need to deter-

mine if you are in the Setup Program state or not.

In-System Programming Considerations

Flash memories can be programmed in-system or in a

standard PROM programmer. The device may be sol-

dered to the circuit board upon receipt of shipment and

programmed in-system. Alternatively, the device may

initially be programmed in a PROM programmer prior

to soldering the device to the circuit board.

Auto Select Command

AMD’s Flash memories are designed for use in appli-

cations where the local CPU alters memory contents.

In order to correctly program any Flash memories

in-system, manufacturer and device codes must be

accessible while the device resides in the target

system. PROM programmers typically access the sig-

nature codes by raising A9 to a high voltage. However,

multiplexing high voltage onto address lines is not a

generally desired system design practice.

The device contains an Auto Select operation to supple-

ment traditional PROM programming methodologies.

The operation is initiated by writing 80h or 90h into the

command register. Following this command, a read

cycle address 0000h retrieves the manufacturer code of

01h (AMD). A read cycle from address 0001h returns

the device code (see the Auto Select Code table of the

corresponding device data sheet). To terminate the op-

eration, it is necessary to write another valid command,

such as Reset (00h or FFh), into the register.

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Am28F010A

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