AM28F010A-70PE 查看數據表（PDF） - Advanced Micro Devices
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AM28F010A-70PE
Advanced Micro Devices
AM28F010A-70PE Datasheet PDF : 35 Pages
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AC Characteristics—Write (Erase/Program) Operations
Parameter Symbols
Am28F010A Speed Options
JEDEC Standard Description
-70 -90 -120 -150 -200 Unit
tAVAV
tWC
tAVWL tAS
tWLAX tAH
tDVWH tDS
tWHDX tDH
tOEH
Write Cycle Time (Note 4)
Address Setup Time
Address Hold Time
Data Setup Time
Data Hold Time
Output Enable Hold Time for Embedded
Algorithm only
Min 70
Min
0
Min 45
Min 45
Min 10
Min 10
90 120 150 200 ns
0
0
0
0
ns
45 50 60 75 ns
45 50 50 50 ns
10 10 10 10 ns
10 10 10 10 ns
tGHWL
tELWLE tCSE
tWHEH tCH
tWLWH tWP
tWHWL tWPH
tWHWH3
tWHWH4
tVPEL
tVCS
tVPPR
tVPPF
tLKO
Read Recovery TIme Before Write
Min
0
0
0
0
0
ns
CE# Embedded Algorithm Setup TIme
Min 20 20 20 20 20 ns
CE# Hold TIme
Min
0
0
0
0
0
ns
Write Pulse Width
Min 45 45 50 60 60 ns
Write Pulse Width High
Min 20 20 20 20 20 ns
Embedded Program Operation (Note 2)
Min 14 14 14 14 14 µs
Embedded Erase Operation (Note 3)
Typ
5
5
5
5
5 sec
VPP Setup Time to Chip Enable Low (Note 4) Min 100 100 100 100 100 ns
VCC Setup TIme (Note 4)
Min 50 50 50 50 50 µs
VPP Rise Time (Note 4) 90% VPPH
Min 500 500 500 500 500 ns
VPP Fall Time (Note 4) 90% VPPL
Min 500 500 500 500 500 ns
VCC < VLKO to Reset (Note 4)
Min 100 100 100 100 100 ns
Notes:
1. Read timing characteristics during read/write operations are the same as during read-only operations. Refer to AC
Characteristics for Read Only operations.
2. Embedded Program Operation of 14 µs consists of 10 µs program pulse and 4 µs write recovery before read. This is the
minimum time for one pass through the programming algorithm.
3. Embedded Erase operation of 5 sec consists of 4 sec array pre-programming time and one sec array erase time. This is a
typical time for one embedded erase operation.
4. Not 100% tested.
Am28F010A
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