AM28F010A-70FEB 查看數據表（PDF） - Advanced Micro Devices

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AM28F010A-70FEB

1 megabit CMOS 12.0 volt, bulk erase flash memory with embedded algorithms

Advanced Micro Devices 

ERASE AND PROGRAMMING PERFORMANCE

Parameter

Chip Erase Time

Chip Programming Time

Write/Erase Cycles

Byte Programming Time

Limits

Typ

Max

Min (Note 1) (Note 2)

1

10

2

12.5

100,000

14

96

(Note 3)

Unit

Comments

sec Excludes 00h programming prior to erasure

sec Excludes system-level overhead

Cycles

µs

ms

Notes:

1. 25°C, 12 V VPP.

2. Maximum time specified is lower than worst case. Worst case is derived from the embedded algorithm internal counter which

allows for a maximum 6000 pulses for both program and erase operations. Typical worst case for program and erase is

significantly less than the actual device limit.

3. Typical worst case = 84 µs. DQ5 = “1” only after a byte takes longer than 96 ms to program.

LATCHUP CHARACTERISTICS

Parameter

Input Voltage with respect to VSS on all pins except I/O pins (Including A9 and VPP)

Input Voltage with respect to VSS on all pins I/O pins

Current

Includes all pins except VCC. Test conditions: VCC = 5.0 V, one pin at a time.

PIN CAPACITANCE

Parameter

Symbol

Parameter Description

Test Conditions

CIN

COUT

CIN2

Input Capacitance

Output Capacitance

VPP Input Capacitance

VIN = 0

VOUT = 0

VPP = 0

Note: Sampled, not 100% tested. Test conditions TA = 25°C, f = 1.0 MHz.

DATA RETENTION

Parameter

Minimum Pattern Data Retention Time

Test Conditions

150°C

125°C

Min

–1.0 V

–1.0 V

–100 mA

Max

13.5 V

VCC + 1.0 V

+100 mA

Typ

Max

Unit

8

10

pF

8

12

pF

8

12

pF

Min

Unit

10

Years

20

Years

Am28F010A

31

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