AM28F010A-150EC 查看數據表（PDF） - Advanced Micro Devices

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AM28F010A-150EC

1 megabit CMOS 12.0 volt, bulk erase flash memory with embedded algorithms

Advanced Micro Devices 

DATA SHEET REVISION SUMMARY FOR

AM28F010A

Revision C+1

Distinctive Characteristics:

High Performance: The fastest speed option available

is now 70 ns.

General Description:

Paragraph 2: Changed fastest speed option to 70 ns.

Product Selector Guide:

Added -70, deleted -95 and -250 speed options.

Ordering Information, Standard Products:

The -70 speed option is now listed in the example.

Valid Combinations: Added -70, deleted -95 and -250

combinations.

Operating Ranges:

VCC Supply Voltages: Added -70, deleted -95 and -250

speed options in the list.

AC Characteristics:

Read Only Operations Characteristics: Added the -70

column and test conditions.

Deleted -95 and -250 speed options.

AC Characteristics:

Write/Erase/Program Operations, Alternate CE# Con-

trolled Writes: Added the -70 column. Deleted -95 and

-250 speed options.

Switching Test Waveforms:

In the 3.0 V waveform caption, changed -95 to -70.

Revision D

Matched formatting to other current data sheets.

Revision D+1

Programming In A PROM Programmer:

Deleted the paragraph “(Refer to the AUTO SELECT

paragraph in the ERASE, PROGRAM, and READ

MODE section for programming the Flash memory de-

vice in-system).”

Revision D+2

General Description

Embedded Program: Changed “The typical room tem-

perature programming time of this device is four sec-

onds.” to “The typical room temperature programming

time of this device is two seconds.”

Trademarks

Copyright © 1998 Advanced Micro Devices, Inc. All rights reserved.

ExpressFlash is a trademark of Advanced Micro Devices, Inc.

AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc.

Product names used in this publication are for identification purposes only and may be trademarks of their respective companies.

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Am28F010A

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