AMD29F010B-120EC 查看數據表（PDF） - Advanced Micro Devices

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AMD29F010B-120EC

1 megabit (128 K x 8-Bit) CMOS 5.0 volt-only, uniform sector flash memory

Advanced Micro Devices 

PRELIMINARY

DC CHARACTERISTICS

TTL/NMOS Compatible

Parameter

Symbol

Parameter Description

Test Description

ILI

Input Load Current

ILIT

A9 Input Load Current

ILO

Output Leakage Current

ICC1

VCC Active Read Current

(Notes 1, 2)

VIN = VSS to VCC, VCC = VCC Max

VCC = VCC Max, A9 = 12.5 V

VOUT = VSS to VCC, VCC = VCC Max

CE# = VIL, OE# = VIH

ICC2

VCC Active Write Current

(Notes 2, 3, 4)

CE# = VIL, OE# = VIH

ICC3

VCC Standby Current

CE# and OE# = VIH

VIL

Input Low Voltage

VIH

Input High Voltage

VID

Voltage for Autoselect and Sector

Protect

VCC = 5.0 V

VOL

Output Low Voltage

IOL = 12 mA, VCC = VCC Min

VOH Output High Voltage

IOH = –2.5 mA, VCC = VCC Min

VLKO Low VCC Lock-out Voltage

Notes:

1. The ICC current listed is typically less than 2 mA/MHz, with OE# at VIH.

2. Maximum ICC specifications are tested with VCC=VCCmax.

3. ICC active while Embedded Program or Embedded Erase Algorithm is in progress.

4. Not 100% tested.

Min

–0.5

2.0

10.5

2.4

3.2

Typ

Max

Unit

±1.0

µA

50

µA

±1.0

µA

12

30

mA

30

40

mA

0.4

1.0

mA

0.8

V

VCC + 0.5 V

12.5

V

0.45

V

V

4.2

V

Am29F010B

19

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